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PTFA220081M

Infineon
Part Number PTFA220081M
Manufacturer Infineon
Description High Power RF LDMOS Field Effect Transistor
Published Feb 21, 2016
Detailed Description PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz...
Datasheet PDF File PTFA220081M PDF File

PTFA220081M
PTFA220081M

Overview
PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200 MHz.
This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small overmolded plastic package.
PTFA220081M Package PG-SON-10 IMD (dBc) Efficiency (%) Two-tone Drive-up VDD = 28 V, IDQ = 100 mA, ƒ1 = 939.
5 M Hz, ƒ2 = 940.
5 M Hz -10 -20 Efficiency 50 40 -30 30 IMD 3rd -40 20 -50 IMD 5th 10 -60 34 35 36 37 38 39 40 Output Power, PEP (dBm) 0 41 Features • Typical two-carrier WCDMA performance, 8...


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