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PTFA211801F

Infineon
Part Number PTFA211801F
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FET
Published Feb 21, 2016
Detailed Description PTFA211801E PTFA211801F Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description The PTFA211801E...
Datasheet PDF File PTFA211801F PDF File

PTFA211801F
PTFA211801F

Overview
PTFA211801E PTFA211801F Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description The PTFA211801E and PTFA211801F are thermally-enhanced, 180-watt, internally matched LDMOS FETs intended for WCDMA applications.
They are characaterized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz.
Thermally-enhanced packaging provides the coolest operation available.
PTFA211801E Package H-36260-2 PTFA211801F Package H-37260-2 IM3 (dBc), ACPR (dBc) Drain Efficiency (%) 2-Carrier WCDMA Drive-up VDD = 28 V, IDQ = 1.
2 A, f = 2140 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing -25 30 Efficiency -30 25 -35 IM3 20 -40 15 -45 10 -50 ACPR 5 -55 34 ...


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