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PTFA211001E

Infineon
Part Number PTFA211001E
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FET
Published Feb 21, 2016
Detailed Description PTFA211001E Thermally-Enhanced High Power RF LDMOS FET 100 W, 2110 – 2170 MHz Description The PTFA211001E is a thermal...
Datasheet PDF File PTFA211001E PDF File

PTFA211001E
PTFA211001E

Overview
PTFA211001E Thermally-Enhanced High Power RF LDMOS FET 100 W, 2110 – 2170 MHz Description The PTFA211001E is a thermally-enhanced, 100-watt, internallymatched GOLDMOS ® FET intended for WCDMA applications.
It is characaterized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz.
Thermally-enhanced packaging provides the coolest operation available.
Full gold metallization ensures excellent device lifetime and reliability.
PTFA211001E Package H-30248-2 IM3 (dBc), ACPR (dBc) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 900 mA, ƒ = 2140 MHz, 3GPP WCDMA signal, 8 dB P/A R, 10 MHz carrier spacing -28 -31 -34 -37 -40 -43 -46 -49 -52 -55 36 IM3 Up Ef f ici...


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