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PTFA210701F

Infineon
Part Number PTFA210701F
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FET
Published Feb 21, 2016
Detailed Description Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz PTFA210701...
Datasheet PDF File PTFA210701F PDF File

PTFA210701F
PTFA210701F

Overview
Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz PTFA210701E PTFA210701F Description The PTFA210701E and PTFA210701F are 70-watt LDMOS FETs designed for single- and dual-carrier WCDMA power amplifier applications in the 2110 MHz to 2170 MHz band.
Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges.
Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
PTFA210701E Package H-36265-2 PTFA210701F Package H-37265-2 IM3 (dBc), ACPR (dBc) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 30 V, IDQ = ...


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