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PTFA211801E

Part Number	PTFA211801E
Manufacturer	Infineon
Description	Thermally-Enhanced High Power RF LDMOS FET
Published	Feb 21, 2016
Detailed Description	IM3 (dBc), ACPR (dBc) not DrainrecommenEffdiciencyed(%)for new design PTFA211801E Confidential, Limited Internal Distr...
Datasheet	PTFA211801E PDF File

Overview

IM3 (dBc), ACPR (dBc) not DrainrecommenEffdiciencyed(%)for new design PTFA211801E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 180 W, 2110 – 2170 MHz Description The PTFA211801E is a thermally-enhanced, 180-watt, internally matched LDMOS FET intended for WCDMA applications.
It is characaterized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz.
Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PTFA211801E Package H-36260-2 Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 1.
2 A, ƒ = 2140 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing -25 30 -3...

Similar Datasheet

PTFA211801E Thermally-Enhanced High Power RF LDMOS FET - Infineon
PTFA211801F Thermally-Enhanced High Power RF LDMOS FET - Infineon

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