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IRF7488PBF

International Rectifier
Part Number IRF7488PBF
Manufacturer International Rectifier
Description Power MOSFET
Published Feb 17, 2016
Detailed Description Applications l High frequency DC-DC converters l Lead-Free PD - 95283 IRF7488PbF HEXFET® Power MOSFET VDSS 80V RDS(...
Datasheet PDF File IRF7488PBF PDF File

IRF7488PBF
IRF7488PBF


Overview
Applications l High frequency DC-DC converters l Lead-Free PD - 95283 IRF7488PbF HEXFET® Power MOSFET VDSS 80V RDS(on) max 29mW@VGS=10V Qg 38nC Benefits S l Low Gate-to-Drain Charge to Reduce Switching Losses S l Fully Characterized Capacitance Including S Effective COSS to Simplify Design, (See App.
Note AN1001) G l Fully Characterized Avalanche Voltage and Current 18 27 36 45 Top View AA D D D D SO-8 Absolute Maximum Ratings Symbol VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient „ Notes  through „ are on page 9 www.
irf.
com Max.
80 ± 20 6.
3 5.
0 50 2.
5 1.
6 20 -55 to + 150 300 (1.
6mm from case ) Units V A W mW/°C °C Typ.
––– ––– Max.
20 50 Units °C/W 1 09/21/04 IRF7488PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min.
Typ.
Max.
Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage IGSS Gate-to-Source Reverse Leakage 80 ––– ––– ––– 0.
089 ––– ––– 24 29 2.
0 ––– 4.
0 ––– ––– 20 ––– ––– 250 ––– ––– 200 ––– ––– -200 V VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA ƒ mΩ VGS = 10V, ID = 3.
8A ƒ V VDS = VGS, ID = 250µA µA VDS = 80V, VGS = 0V VDS = 64V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V Dynamic @ TJ = 25°C (unless otherwise specified) Parameter Min.
Typ.
Max.
Units Conditions gfs Forward Transconductance 9.
3 ––– ––– S VDS = 15V, ID = 3.
8A Qg Total Gate Charge ––– 38 57 ID =...


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