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IRF7484QPBF

Part Number	IRF7484QPBF
Manufacturer	International Rectifier
Description	Power MOSFET
Published	Feb 17, 2016
Detailed Description	PD - 96167 AUTOMOTIVE MOSFET Typical Applications l Relay replacement l Anti-lock Braking System l Air Bag IRF7484QPb...
Datasheet	IRF7484QPBF PDF File

Overview

PD - 96167 AUTOMOTIVE MOSFET Typical Applications l Relay replacement l Anti-lock Braking System l Air Bag IRF7484QPbF HEXFET® Power MOSFET VDSS RDS(on) max (mW) ID Benefits l Advanced Process Technology l Ultra Low On-Resistance l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free l RoHS Compliant (Halogen Free) Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this HEXFET power MOSFET are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
40V 10@VGS = 7.
0V S1 S2 S3 G4 AA 8D 7D 6D 5D Top View 14A SO-8 Absolute Maximum Ratings ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS EAS IAR EAR TJ, TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Junction and Storage Temperature Range Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient Max.
14 11 110 2.
5 0.
02 ± 8.
0 230 See Fig.
16c, 16d, 19, 20 -55 to + 150 Units A W W/°C V mJ A mJ °C Typ.
––– ––– Max.
20 50 Units °C/W www.
irf.
com 1 08/01/08 IRF7484QPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage ...

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IRF7484QPBF Power MOSFET - International Rectifier

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