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IRGS4045DPBF

Part Number	IRGS4045DPBF
Manufacturer	International Rectifier
Description	Insulated Gate Bipolar Transistor
Published	Feb 16, 2016
Detailed Description	IRGS4045DPbF VCES = 600V IC  6.0A, TC = 100°C INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE CC...
Datasheet	IRGS4045DPBF PDF File

Overview

IRGS4045DPbF VCES = 600V IC  6.
0A, TC = 100°C INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE CC tsc > 5µs, Tjmax = 175°C VCE(on) typ.
 1.
7V G E n-channel E D2-PakG IRGS4045DPbF Applications  Appliance Motor Drive  Inverters  SMPS G Gate C Colletor E Emitter Fe a ture s Low VCE(ON) and switching losses  Benefits High efficiency in a wide range of applications and switching frequencies Square RBSOA and maximum junction temperature 175°C Improved reliability due to rugged hard switching performance and higher power capability Positive VCE(ON) temperature coefficient and tighter distribution of parameters Excellent current sharing in parallel operation ...

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IRGS4045DPBF Insulated Gate Bipolar Transistor - International Rectifier

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