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IRGR3B60KD2PBF

International Rectifier
Part Number IRGR3B60KD2PBF
Manufacturer International Rectifier
Description Insulated Gate Bipolar Transistor
Published Feb 16, 2016
Detailed Description PD - 95036 IRGR3B60KD2PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on)...
Datasheet PDF File IRGR3B60KD2PBF PDF File

IRGR3B60KD2PBF
IRGR3B60KD2PBF

Overview
PD - 95036 IRGR3B60KD2PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Lead-Free Benefits • Benchmark Efficiency for Motor Control.
C G E n-channel • Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
VCES = 600V IC = 4.
2A, TC=100°C tsc > 10µs, TJ=150°C VCE(on) typ.
= 1.
9V Absolute Maximum Ratings Parameter VCES Collector-to-Emitter Voltage IC @ TC = 25°C Continuous Collector Current IC @ TC = 10...


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