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IRGP6660DPBF

International Rectifier
Part Number IRGP6660DPBF
Manufacturer International Rectifier
Description Insulated Gate Bipolar Transistor
Published Feb 16, 2016
Detailed Description VCES = 600V IC = 60A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 48A Applications • Welding • H Bri...
Datasheet PDF File IRGP6660DPBF PDF File

IRGP6660DPBF
IRGP6660DPBF

Overview
VCES = 600V IC = 60A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ.
= 1.
7V @ IC = 48A Applications • Welding • H Bridge Converters IRGP6660DPbF IRGP6660D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode CC C G E n-channel G Gate GCE IRGP6660DPbF TO-247AC C Collector E GC IRGP6660D-EPbF TO-247AD E Emitter Features Low VCE(ON) and switching losses Optimized diode for full bridge hard switch converters Square RBSOA and maximum junction temperature 175°C 5µs short circuit SOA Positive VCE (ON) temperature coefficient Lead-free, RoHS compliant Benefits High efficiency in a wide range of applications Optimized for welding and H bridge converters Improved relia...


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