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IRGP6650D-EPbF

Part Number	IRGP6650D-EPbF
Manufacturer	International Rectifier
Description	Insulated Gate Bipolar Transistor
Published	Feb 16, 2016
Detailed Description	VCES = 600V IC = 50A, TC =100°C IRGP6650DPbF IRGP6650D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Re...
Datasheet	IRGP6650D-EPbF PDF File

Overview

VCES = 600V IC = 50A, TC =100°C IRGP6650DPbF IRGP6650D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C C tSC 5µs, TJ(max) = 175°C VCE(ON) typ.
= 1.
65V @ IC = 35A Applications  Welding  H Bridge Converters G E n-channel G Gate E C G IRGP6650DPbF TO‐247AC C Collector GCE IRGP6650D‐EPbF TO‐247AD E Emitter Features Low VCE(ON) and Switching Losses Optimized Diode for Full Bridge Hard Switch Converters Square RBSOA and Maximum Temperature of 175°C 5µs Short Circuit Positive VCE (ON) Temperature Co-efficient Lead-free, RoHS compliant Benefits High Efficiency in a Wide Range of Applications Optimized for Welding and H Bridge Converters Improved...

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IRGP6650D-EPbF Insulated Gate Bipolar Transistor - International Rectifier

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