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F59L1G81A

Part Number	F59L1G81A
Manufacturer	Elite Semiconductor
Description	1 Gbit (128M x 8) 3.3V NAND Flash Memory
Published	Feb 16, 2016
Detailed Description	ESMT Flash FEATURES z Voltage Supply: 2.6V ~ 3.6V z Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register...
Datasheet	F59L1G81A PDF File

Overview

ESMT Flash FEATURES z Voltage Supply: 2.
6V ~ 3.
6V z Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit z Automatic Program and Erase - Page Program: (2K + 64) bytes - Block Erase: (128K + 4K) bytes z Page Read Operation - Page Size: (2K + 64) bytes - Random Read: 25us (Max.
) - Serial Access: 25ns (Min.
) z Memory Cell: 1bit/Memory Cell z Fast Write Cycle Time - Program time: 200us (Typ.
) - Block Erase time: 1.
5ms (Typ.
) z Command/Address/Data Multiplexed I/O Port z Hardware Data Protection - Program/Erase Lockout During Power Transitions z Reliable CMOS Floating Gate Technology z Endurance: - 100K Program/Erase Cycles (with 1 bit/528 bytes ECC) - Data Reten...

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