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SIGC32T120R3E

Infineon
Part Number SIGC32T120R3E
Manufacturer Infineon
Description IGBT
Published Feb 14, 2016
Detailed Description SIGC32T120R3E IGBT3 Power Chip Features:  1200V Trench + Field Stop technology  low turn-off losses  short tail cur...
Datasheet PDF File SIGC32T120R3E PDF File

SIGC32T120R3E
SIGC32T120R3E

Overview
SIGC32T120R3E IGBT3 Power Chip Features:  1200V Trench + Field Stop technology  low turn-off losses  short tail current  positive temperature coefficient  easy paralleling This chip is used for:  power modules Applications:  drives Chip Type VCE IC SIGC32T120R3E 1200V 25A Die Size 6.
5 x 4.
87 mm2 C G E Package sawn on foil Mechanical Parameters Raster size Emitter pad size (incl.
gate pad) Gate pad size Area total Thickness Wafer size Max.
possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 6.
5 x 4.
87 3.
4 x 4.
992 1.
139 x 1.
139 mm2 31.
6 140 µm 200 mm 842 Photoimide 3200 nm AlSiCu...


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