IGBT - Infineon
Description
SIGC12T120LE
IGBT3 Power Chip
Features: 1200V Trench + Field Stop technology low turn-off losses short tail current positive temperature coefficient easy paralleling
This chip is used for: power module
Applications: drives
C G
E
Chip Type SIGC12T120LE
VCE 1200V
ICn 8A
Die Size 3.
54 x 3.
5 mm2
Package sawn on foil
MECHANICAL PARAMETER Raster size Emitter pad size (incl.
gate pad) Gate pad size Area total / active Thickness Wafer size Max.
possible chips per wafer Passivation frontside Pad metal
Backside metal
Die bond Wire bond Reject ink dot size
Recommended storage environment
3.
54 x 3.
5
2.
028 x 2.
028 1.
107 x 0.
702
mm2
12.
39 / 6.
82
120 µm
200 mm
2243 pcs
Photoimide
3200 nm AlSiCu
Ni Ag –system suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Al, <500µm
0.
65mm ; max 1.
2mm
Store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies, IFAG IPC TD VLS, L7621N, L7621U, L7621F, Rev 1.
0, 27.
06.
2014
MAXIMUM RATINGS
SIGC12T120LE
Parameter
Symbol
Value
Unit
Collector-Emitter voltage, T =25 C j
DC collector current, limited by Tj max
VCE IC
1200
1)
V A
Pulsed collector current, tp limited by Tj max
Ic,puls
24 A
Gate emitter voltage
VGE
20 V
Maximum junction and storage temperature
Tvj,max , Tstg
-55 .
.
.
+150
°C
Short circuit data 2 ) VGE = 15V, VCC = 900V, Tvj = 125°C
tp,max
10 µs
Reverse bias safe operating area 2 ) (RBSOA) 1 ) depending on thermal properties of assembly
I C , m a x = 16A, V C E , m a x = 1200V, Tvj,op 125°C
2 ) not subject to production test - verified by design/characterization
STATIC CHARACTERISTICS (tested on wafer), Tj=25 C
Parameter
Symbol
Conditions
Value Unit
min.
typ.
max.
Collector-Emitter breakdown voltage Collector-Emitter saturation voltage Gate-Emitter threshold voltage Zero gate voltage collector current Gate-Emitter leakage current Integrated gate resistor
V(BR)CES VCE(sat...
Similar Datasheet
- SIGC12T120 IGBT - Infineon Technologies
- SIGC12T120E IGBT - Infineon
- SIGC12T120L IGBT - Infineon Technologies
- SIGC12T120LE IGBT - Infineon
