New Product N-Channel 30 V (D-S) MOSFETs SiZ702DT Vishay Siliconix PRODUCT SUMMARY Channel-1 and Channel-2 VDS (V) RDS(on) () 0.0120 at VGS = 10 V 30 0.0145 at VGS = 4.5 V ID (A) 16a 16a Qg (Typ.) 6.8 nC PowerPAIR® 6 x 3.7 Pin 1 G1 3.73 mm 1 D1 2 D1 D1 3 G2 6 S2 5 S1/D2 (Pin 7) S2 4.
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFETs
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Notebook System Power
• POL
• Low Current DC/DC
D1
G1
N-Channel 1 MOSFET
G2
N-Channel 2 MOSFET
S2
S1/D2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Channel-1
Channel-2
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current Source Drain Current Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy
Maximum Power Dissipation
O.
Similar Product