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BFR750L3RH

Infineon
Part Number BFR750L3RH
Manufacturer Infineon
Description Linear Low Noise SiGe:C Bipolar RF Transistor
Published Feb 11, 2016
Detailed Description Linear Low Noise SiGe:C Bipolar RF Transistor • High gain ultra low noise RF transistor • Based on Infineon's reliable h...
Datasheet PDF File BFR750L3RH PDF File

BFR750L3RH
BFR750L3RH


Overview
Linear Low Noise SiGe:C Bipolar RF Transistor • High gain ultra low noise RF transistor • Based on Infineon's reliable high volume Silicon Germanium technology • Provides outstanding performance for a wide range of wireless applications up to 10 GHz • Ideal for WLAN and all 5-6 GHz applications • High OIP3 and P-1dB for driver stages • High maximum stable and available gain Gms = 21 dB at 1.
8 GHz, Gma = 11.
5 dB at 6 GHz • Pb-free (RoHS compliant) and halogen-free very thin small leadless package (package height 0.
32 mm max.
ideal for modules) • Qualification report according to AEC-Q101 available BFR750L3RH ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type ...



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