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BFR193L3

Part Number	BFR193L3
Manufacturer	Infineon
Description	NPN Bipolar RF Transistor
Published	Feb 11, 2016
Detailed Description	NPN Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 G...
Datasheet	BFR193L3 PDF File

Overview

NPN Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available BFR193L3 3 12 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR193L3 Marking Pin Configuration RC 1=B 2=E 3=C Package TSLP-3-1 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 89°C Junction temperature Storage temperature VCEO ...

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