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NDT02N60Z

Part Number	NDT02N60Z
Manufacturer	ON Semiconductor
Description	N-Channel Power MOSFET
Published	Feb 9, 2016
Detailed Description	NDT02N60Z N-Channel Power MOSFET 600 V, 8.0 W Features • 100% Avalanche Tested • Extremely High dv/dt Capability • Gate...
Datasheet	NDT02N60Z PDF File

Overview

NDT02N60Z N-Channel Power MOSFET 600 V, 8.
0 W Features • 100% Avalanche Tested • Extremely High dv/dt Capability • Gate Charge Minimized • Zener−protected • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA Steady State, TC = 25°C VDSS 600 V VGS ±30 V ID 0.
3 A Continuous Drain Current RqJA Steady State, TC = 100°C ID 0.
21 A Power Dissipation – RqJA Steady State, TC = 25°C Pulsed Drain Current Continuous Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (ID = 1.
4 A) PD IDM IS...

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NDT02N60Z N-Channel Power MOSFET - ON Semiconductor

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