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NDD60N900U1

ON Semiconductor
Part Number NDD60N900U1
Manufacturer ON Semiconductor
Description N-Channel Power MOSFET
Published Feb 9, 2016
Detailed Description NDD60N900U1 N-Channel Power MOSFET 600 V, 900 mW Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen ...
Datasheet PDF File NDD60N900U1 PDF File

NDD60N900U1
NDD60N900U1

Overview
NDD60N900U1 N-Channel Power MOSFET 600 V, 900 mW Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 600 V Gate−to−Source Voltage VGS ±25 V Continuous Drain Current RqJC Steady State TC = 25°C TC = 100°C ID 5.
7 A 3.
6 Power Dissipation Steady – RqJC State TC = 25°C PD 74 W Pulsed Drain Current tp = 10 ms IDM 20 A Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (ID = 2 A) Peak Diode Recovery (Note 1) TTSJT,G IS EAS −55 to +150 5.
7 3...


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