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NDD60N550U1

ON Semiconductor
Part Number NDD60N550U1
Manufacturer ON Semiconductor
Description N-Channel Power MOSFET
Published Feb 9, 2016
Detailed Description NDD60N550U1 N-Channel Power MOSFET 600 V, 550 mW Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen ...
Datasheet PDF File NDD60N550U1 PDF File

NDD60N550U1
NDD60N550U1

Overview
NDD60N550U1 N-Channel Power MOSFET 600 V, 550 mW Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol NDD Unit Drain−to−Source Voltage VDSS 600 V Gate−to−Source Voltage VGS ±25 V Continuous Drain Current RqJC Steady TC = ID 8.
2 A State 25°C TC = 100°C 5.
2 Power Dissipation – RqJC Steady State TC = 25°C Pulsed Drain Current tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (ID = 4 A) Peak Diode Recovery (Note 1) PD IDM TJ, TSTG IS EAS 94 W 34 −55 to +150 8.
2 ...


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