DatasheetsPDF.com

NDD60N360U1

Part Number	NDD60N360U1
Manufacturer	ON Semiconductor
Description	N-Channel Power MOSFET
Published	Feb 9, 2016
Detailed Description	NDD60N360U1 N-Channel Power MOSFET 600 V, 360 mW Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen...
Datasheet	NDD60N360U1 PDF File

Overview

NDD60N360U1 N-Channel Power MOSFET 600 V, 360 mW Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol NDD Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJC Power Dissipation – RqJC Pulsed Drain Current Steady State Steady State TC = 25°C TC = 100°C TC = 25°C tp = 10 ms VDSS VGS ID PD IDM 600 V ±25 V 11 A 6.
9 114 W 44 A Operating Junction and Storage Temperature TJ, TSTG −55 to +150 °C Source Current (Body Diode) IS 13 A Single Pulse Drain−to−Source Avalanche Energy (ID = 3.
5 A) EAS 64 mJ RMS Isolation Voltage...

Similar Datasheet

NDD60N360U1 N-Channel Power MOSFET - ON Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)