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MTB6N60E1

ON Semiconductor
Part Number MTB6N60E1
Manufacturer ON Semiconductor
Description High Energy Power FET
Published Feb 9, 2016
Detailed Description MTB6N60E1 TMOS E−FET.™ High Energy Power FET D2PAK−SL Straight Lead N−Channel Enhancement−Mode Silicon Gate http://ons...
Datasheet PDF File MTB6N60E1 PDF File

MTB6N60E1
MTB6N60E1

Overview
MTB6N60E1 TMOS E−FET.
™ High Energy Power FET D2PAK−SL Straight Lead N−Channel Enhancement−Mode Silicon Gate http://onsemi.
com This advanced TMOS E−FET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain−to−source diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
• Robust High Voltage Termination • Avalanche Energy Sp...


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