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CEU5175

CET
Part Number CEU5175
Manufacturer CET
Description P-Channel MOSFET
Published Feb 9, 2016
Detailed Description CED5175/CEU5175 P-Channel Enhancement Mode Field Effect Transistor FEATURES -55V, -40A, RDS(ON) = 23mΩ @VGS = -10V. RDS...
Datasheet PDF File CEU5175 PDF File

CEU5175
CEU5175

Overview
CED5175/CEU5175 P-Channel Enhancement Mode Field Effect Transistor FEATURES -55V, -40A, RDS(ON) = 23mΩ @VGS = -10V.
RDS(ON) = 28mΩ @VGS = -4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
TO-251 & TO-252 package.
D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD -55 ±20 -40 -160 68 0.
52 Operating and Store Temperature Range TJ,T...


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