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CEB45N10

CET
Part Number CEB45N10
Manufacturer CET
Description N-Channel MOSFET
Published Feb 9, 2016
Detailed Description CEP45N10/CEB45N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 44A, RDS(ON) = 39mΩ @VGS = 10V. Sup...
Datasheet PDF File CEB45N10 PDF File

CEB45N10
CEB45N10

Overview
CEP45N10/CEB45N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 44A, RDS(ON) = 39mΩ @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 100 VGS ±25 Drain Current-Continuous Drain Current-Pulsed a ID 44 IDM 176 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C PD 136 0.
91 Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating an...


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