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CEU55N10

Part Number	CEU55N10
Manufacturer	CET
Description	N-Channel MOSFET
Published	Feb 9, 2016
Detailed Description	CED55N10/CEU55N10 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 100V, 55A, RDS(ON) = 16mΩ @...
Datasheet	CEU55N10 PDF File

Overview

CED55N10/CEU55N10 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 100V, 55A, RDS(ON) = 16mΩ @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
TO-251 & TO-252 package.
D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 100 ±20 55 220 83.
3 0.
55 Operating and Store Temperature Range TJ,Tstg -55 to 175...

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CEU55N10 N-Channel MOSFET - CET

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