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KF8N60P

Part Number	KF8N60P
Manufacturer	KEC
Description	N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Published	Feb 7, 2016
Detailed Description	SEMICONDUCTOR TECHNICAL DATA KF8N60P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe M...
Datasheet	KF8N60P PDF File

Overview

SEMICONDUCTOR TECHNICAL DATA KF8N60P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for active power factor correction and switching mode power supplies.
FEATURES VDSS=600V, ID=8A Drain-Source ON Resistance : RDS(ON)(Max)=1.
05 @VGS=10V Qg(typ.
)= 24nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL KF8N60P KF8N60F Drain-Source Voltage VDSS 600 Gate-Source Voltage VGSS 30 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (N...

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