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IGC109T120T6RH

Part Number	IGC109T120T6RH
Manufacturer	Infineon
Description	IGBT
Published	Feb 7, 2016
Detailed Description	IGC109T120T6RH IGBT4 High Power Chip Features: • 1200V Trench + Field stop technology • low VCE(sat) • soft turn off • ...
Datasheet	IGC109T120T6RH PDF File

Overview

IGC109T120T6RH IGBT4 High Power Chip Features: • 1200V Trench + Field stop technology • low VCE(sat) • soft turn off • positive temperature coefficient • easy paralleling This chip is used for: • medium / high power modules Applications: • medium / high power drives C G E Chip Type VCE ICn Die Size IGC109T120T6RH 1200V 110A 7.
48 x 14.
61 mm2 Package sawn on foil MECHANICAL PARAMETER Raster size Emitter pad size (incl.
gate pad) Gate pad size Area total / active Thickness Wafer size Flat position Max.
possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 7.
48 x 14.
61 4 x (2.
761 x 6.
458) 0.
811 x 1...

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