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IGC109T120T6RL

Part Number	IGC109T120T6RL
Manufacturer	Infineon
Description	IGBT
Published	Feb 7, 2016
Detailed Description	IGC109T120T6RL IGBT4 Low Power Chip Features: • 1200V Trench + Field stop technology • low switching losses • positive...
Datasheet	IGC109T120T6RL PDF File

Overview

IGC109T120T6RL IGBT4 Low Power Chip Features: • 1200V Trench + Field stop technology • low switching losses • positive temperature coefficient • easy paralleling This chip is used for: • low / medium power modules Applications: • low / medium power drives C G E Chip Type VCE ICn Die Size IGC109T120T6RL 1200V 110A 7.
48 x 14.
61 mm2 Package sawn on foil MECHANICAL PARAMETER Raster size Emitter pad size (incl.
gate pad) Gate pad size Area total / active Thickness Wafer size Flat position Max.
possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 7.
48 x 14.
61 4 x (2.
761 x 6.
458) 0.
811 x 1.
31 mm 2 ...

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