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VT10200C-M3

Vishay
Part Number VT10200C-M3
Manufacturer Vishay
Description Trench MOS Barrier Schottky Rectifier
Published Feb 5, 2016
Detailed Description www.vishay.com VT10200C-M3 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at...
Datasheet PDF File VT10200C-M3 PDF File

VT10200C-M3
VT10200C-M3

Overview
www.
vishay.
com VT10200C-M3 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
58 V at IF = 2.
5 A TMBS ® TO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max.
10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.
vishay.
com/doc?99912 VT10200C 3 2 1 PIN 1 PIN 2 PIN 3 CASE PRIMARY CHARACTERISTICS Package TO-220AB IF(AV) VRRM IFSM VF at IF = 5.
0 A TJ max.
Diode variations 2 x 5.
0 A 200 V 80 A 0.
65 V 150 °C Common cathode TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheel...


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