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NVJS4151P

ON Semiconductor
Part Number NVJS4151P
Manufacturer ON Semiconductor
Description Trench Power MOSFET
Published Feb 4, 2016
Detailed Description NVJS4151P MOSFET – Power, Single P-Channel, Trench, SC-88 -20 V, -4.1 A Features • Leading Trench Technology for Low R...
Datasheet PDF File NVJS4151P PDF File

NVJS4151P
NVJS4151P

Overview
NVJS4151P MOSFET – Power, Single P-Channel, Trench, SC-88 -20 V, -4.
1 A Features • Leading Trench Technology for Low RDS(ON) Extending Battery Life • SC−88 Small Outline (2x2 mm) for Maximum Circuit Board Utilization, Same as SC−70−6 • Gate Diodes for ESD Protection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • High Side Load Switch • Cell Phones, Computing, Digital Cameras, MP3s and PDAs MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS −20 V Gate−to−Source Voltage VGS ±12 V Continuous Drain Current (Note 1) Steady TA = 25 °C ID State ...


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