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DMN601VKQ

Diodes
Part Number DMN601VKQ
Manufacturer Diodes
Description DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Published Feb 4, 2016
Detailed Description DMN601VKQ DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary BVDSS 60V RDS(ON) Max 2Ω @ VGS = 10...
Datasheet PDF File DMN601VKQ PDF File

DMN601VKQ
DMN601VKQ


Overview
DMN601VKQ DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary BVDSS 60V RDS(ON) Max 2Ω @ VGS = 10V 3Ω @ VGS = 4.
5V ID Max TA = +25°C 305mA 249mA Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications.
It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in:  General-purpose interfacing switches  Power-management functions  Analog switches Features and Benefits  Dual N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Ultra-Small Surface-Mount Package  Totally Lead-Free & Fully RoHS Compliant (Not...



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