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IRG7PG35U-EPbF

Part Number	IRG7PG35U-EPbF
Manufacturer	International Rectifier
Description	INSULATED GATE BIPOLAR TRANSISTOR
Published	Feb 4, 2016
Detailed Description	IRG7PG35UPbF IRG7PG35U-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features  Low VCE (ON) trench IGBT technology  Low ...
Datasheet	IRG7PG35U-EPbF PDF File

Overview

IRG7PG35UPbF IRG7PG35U-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features  Low VCE (ON) trench IGBT technology  Low switching losses  Square RBSOA  100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient  Tight parameter distribution  Lead-free package C G E n-channel C VCES = 1000V IC = 35A, TC = 100°C TJ(MAX) = 175°C VCE(ON) typ.
= 1.
9V@ IC = 20A C Benefits  High efficiency in a wide range of applications  Suitable for a wide range of switching frequencies due to low VCE(on) and low switching losses  Rugged transient performance for increased reliability  Excellent current sharing in parallel operation Applications  U.
P.
S.
 Welding ...

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IRG7PG35U-EPbF INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

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