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IRG4PH50S-EPBF

International Rectifier
Part Number IRG4PH50S-EPBF
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Feb 4, 2016
Detailed Description PD -96225 IRG4PH50S-EPbF INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features • Standard: Optimized for min...
Datasheet PDF File IRG4PH50S-EPBF PDF File

IRG4PH50S-EPBF
IRG4PH50S-EPBF

Overview
PD -96225 IRG4PH50S-EPbF INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features • Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package • Lead-Free C G E n-channel VCES =1200V VCE(on) typ.
= 1.
47V @VGE = 15V, IC = 33A Benefits • Generation 4 IGBT's offer highest efficiency available • IGBT's optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's Absolute Maximum Ratings Parameter VCES IC@ TC = 25°C IC@ TC = 10...


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