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IRG4IBC30SPBF

International Rectifier
Part Number IRG4IBC30SPBF
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Feb 4, 2016
Detailed Description PD - 95637A INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low ope...
Datasheet PDF File IRG4IBC30SPBF PDF File

IRG4IBC30SPBF
IRG4IBC30SPBF

Overview
PD - 95637A INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating freqencies (<1 kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • Industry standard TO-220 Full-Pak • Lead-Free IRG4IBC30SPbF C G E N-channel VCES = 600V VCE(on) typ.
= 1.
4V @VGE = 15V, IC = 18A Benefits • Generation 4 IGBTs offer highest efficiencies available • IGBTs optimized for specific application conditions • Designed to be a "drop-in" replacement for equivalent industry -standard Generation 3 IR IGBTs Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ T...


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