DatasheetsPDF.com

IRG4IBC30KDPBF

Part Number	IRG4IBC30KDPBF
Manufacturer	International Rectifier
Description	INSULATED GATE BIPOLAR TRANSISTOR
Published	Feb 4, 2016
Detailed Description	PD -95597A IRG4IBC30KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features High switchi...
Datasheet	IRG4IBC30KDPBF PDF File

Overview

PD -95597A IRG4IBC30KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features High switching speed optimized for up to 25kHz with low VCE(on) Short Circuit Rating 10µs @ 125°C, VGE = 15V Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard TO-220 FULLPAK Lead-Free C G E n-channel Short Circuit Rated UltraFast IGBT VCES = 600V VCE(on) typ.
= 2.
21V @VGE = 15V, IC = 9.
2A Benefits Generation 4 IGBTs offer highest efficiencies available maximizing the power dens...

Similar Datasheet

IRG4IBC30KDPBF INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)