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IRG4IBC20UDPBF

Part Number	IRG4IBC20UDPBF
Manufacturer	International Rectifier
Description	INSULATED GATE BIPOLAR TRANSISTOR
Published	Feb 4, 2016
Detailed Description	PD -94917A IRG4IBC20UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT ULTRAFAST SOFT RECOVERY DIODE...
Datasheet	IRG4IBC20UDPBF PDF File

Overview

PD -94917A IRG4IBC20UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT ULTRAFAST SOFT RECOVERY DIODE Features C • 2.
5kV, 60s insulation voltage • 4.
8 mm creapage distance to heatsink VCES = 600V • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes • Tighter parameter distribution • Industry standard Isolated TO-220 FullpakTM G E n-channel VCE(on) typ.
= 1.
85V @VGE = 15V, IC = 6.
5A outline • Lead-Free Benefits • Simplified assembly • Highest efficiency and power density • HEXFREDTM antiparallel Diode minimizes switching loss...

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IRG4IBC20UDPBF INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

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