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IRG4IBC20FDPBF

Part Number	IRG4IBC20FDPBF
Manufacturer	International Rectifier
Description	INSULATED GATE BIPOLAR TRANSISTOR
Published	Feb 4, 2016
Detailed Description	PD -94915A IRG4IBC20FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Very Lo...
Datasheet	IRG4IBC20FDPBF PDF File

Overview

PD -94915A IRG4IBC20FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Very Low 1.
66V votage drop • 2.
5kV, 60s insulation voltage • 4.
8 mm creapage distance to heatsink • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 G kHz in resonant mode).
• IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes E n-channel • Tighter parameter distribution • Industry standard Isolated TO-220 FullpakTM outline • Lead-Free Fast CoPack IGBT VCES = 600V VCE(on) typ.
= 1.
66V @VGE = 15V, IC = 9.
0A Benefits • Simplified assembly • Highest efficiency and power density • HEXFREDTM antiparallel Diode ...

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IRG4IBC20FDPBF INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

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