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SQ4961EY

Vishay
Part Number SQ4961EY
Manufacturer Vishay
Description Automotive Dual P-Channel MOSFET
Published Feb 3, 2016
Detailed Description www.vishay.com SQ4961EY Vishay Siliconix Automotive Dual P-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) R...
Datasheet PDF File SQ4961EY PDF File

SQ4961EY
SQ4961EY


Overview
www.
vishay.
com SQ4961EY Vishay Siliconix Automotive Dual P-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = - 10 V RDS(on) () at VGS = - 4.
5 V ID (A) per leg Configuration - 60 0.
085 0.
115 - 4.
4 Dual FEATURES • TrenchFET® Power MOSFET • AEC-Q101 Qualified • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.
vishay.
com/doc?99912 S1 1 G1 2 S2 3 G2 4 SO-8 Top View S1 S2 8 D1 7 D1 G1 6 D2 5 D2 G2 D1 D2 P-Channel MOSFET P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free SO-8 SQ4961EY-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C TC = 125 °C ID Continuous Source Current (Diode Conduction) Pulsed Drain Currenta IS IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.
1 mH IAS EAS Maximum Power Dissipationa TC = 25 °C TC = 125 °C PD Operating Junction and Storage Temperature Range TJ, Tstg LIMIT - 60 ± 20 - 4.
4 - 2.
5 -3 - 18 - 20 20 3.
3 1.
1 - 55 to + 175 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) Notes a.
Pulse test; pulse width  300 μs, duty cycle  2 %.
b.
When mounted on 1" square PCB (FR-4 material).
PCB Mountb SYMBOL RthJA RthJF LIMIT 105 45 UNIT V A mJ W °C UNIT °C/W S12-2907-Rev.
B, 10-Dec-12 1 Document Number: 67539 For technical questions, contact: automostechsupport@vishay.
com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.
vishay.
com/doc?91000 www.
vishay.
com SQ4961EY Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 μA Gate-Source Threshold Voltage Gate-Source Leakage VGS(th) IGSS VDS = VGS, ID = - 250 μA VDS =...


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