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SQ4946AEY

Vishay
Part Number SQ4946AEY
Manufacturer Vishay
Description Automotive Dual N-Channel MOSFET
Published Feb 3, 2016
Detailed Description www.vishay.com SQ4946AEY Vishay Siliconix Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) ...
Datasheet PDF File SQ4946AEY PDF File

SQ4946AEY
SQ4946AEY


Overview
www.
vishay.
com SQ4946AEY Vishay Siliconix Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 4.
5 V ID (A) per leg Configuration SO-8 Dual D2 D2 5 D1 6 D1 7 8 60 0.
040 0.
055 7 Dual 4 3 G2 2 S2 1 G1 S1 Top View FEATURES • TrenchFET® power MOSFET • 100 % Rg and UIS tested • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 D1 D2 G1 G2 S1 S2 N-Channel MOSFET N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free SO-8 SQ4946AEY-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation b Operating Junction and Storage Temperature Range TC = 25 °C TC = 125 °C L = 0.
1 mH TC = 25 °C TC = 125 °C VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT 60 ± 20 7 4 3.
6 28 18 16.
2 4 1.
3 -55 to +175 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) PCB Mount c Notes a.
Package limited.
b.
Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c.
When mounted on 1" square PCB (FR4 material).
SYMBOL RthJA RthJF LIMIT 110 34 UNIT °C/W S15-1462-Rev.
F, 15-Jun-15 1 Document Number: 71506 For technical questions, contact: automostechsupport@vishay.
com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.
vishay.
com/doc?91000 www.
vishay.
com SQ4946AEY Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistanc...


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