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SQ4937EY

Vishay
Part Number SQ4937EY
Manufacturer Vishay
Published Feb 3, 2016
Description Automotive Dual P-Channel MOSFET
Detailed Description www.vishay.com SQ4937EY Vishay Siliconix Automotive Dual P-Channel 30 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) R...
Datasheet PDF File SQ4937EY PDF File

SQ4937EY
SQ4937EY


Overview
www.
vishay.
com SQ4937EY Vishay Siliconix Automotive Dual P-Channel 30 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = - 10 V RDS(on) () at VGS = - 4.
5 V ID (A) per leg Configuration - 30 0.
075 0.
145 -5 Dual S1 1 G1 2 S2 3 G2 4 SO-8 Top View 8 D1 7 D1 G1 6 D2 5 D2 S1 G2 S2 D1 D2 P-Channel MOSFET P-Channel MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • AEC-Q101 Qualifiedc • Compliant to RoHS Directive 2002/95/EC ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free SO-8 SQ4937EY-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C TC = 125 °C ID Continuous Source Current (Diode Conduction) Pulsed Drain Currenta IS IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.
1 mH IAS EAS Maximum Power Dissipationa TC = 25 °C TC = 125 °C PD Operating Junction and Storage Temperature Range TJ, Tstg LIMIT - 30 ± 20 -5 -3 -3 - 20 - 10 5 3.
3 1.
1 - 55 to + 175 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) Notes a.
Pulse test; pulse width  300 μs, duty cycle  2 %.
b.
When mounted on 1" square PCB (FR-4 material).
c.
Parametric verification ongoing.
PCB Mountb SYMBOL RthJA RthJF LIMIT 110 45 UNIT V A mJ W °C UNIT °C/W S11-2113-Rev.
B, 07-Nov-11 1 Document Number: 67043 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.
vishay.
com/doc?91000 www.
vishay.
com SQ4937EY Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 μA Gate-Source Threshold Voltage Gate-Source Leakage VGS(th) IGSS VDS = VGS, ID = - 250 μA VDS = 0 V, VGS = ± 20 V VGS = 0 V VDS = ...


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