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SQ4920EY

Vishay
Part Number SQ4920EY
Manufacturer Vishay
Description Automotive Dual N-Channel MOSFET
Published Feb 3, 2016
Detailed Description www.vishay.com SQ4920EY Vishay Siliconix Automotive Dual N-Channel 30 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) R...
Datasheet PDF File SQ4920EY PDF File

SQ4920EY
SQ4920EY


Overview
www.
vishay.
com SQ4920EY Vishay Siliconix Automotive Dual N-Channel 30 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.
5 V ID (A) per leg Configuration 30 0.
0145 0.
0175 8 Dual FEATURES • TrenchFET® Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.
vishay.
com/doc?99912 SO-8 D1 D2 S1 1 G1 2 S2 3 G2 4 Top View 8 D1 7 D1 6 D2 G1 5 D2 G2 S1 S2 N-Channel MOSFET N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free SO-8 SQ4920EY-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Currenta TC = 25 °C TC = 125 °C ID Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb IS IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.
1 mH IAS EAS Maximum Power Dissipationb TC = 25 °C TC = 125 °C PD Operating Junction and Storage Temperature Range TJ, Tstg LIMIT 30 ± 20 8 7.
2 4 32 25 31 4.
4 1.
4 - 55 to + 175 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) Notes a.
Package limited.
b.
Pulse test; pulse width  300 μs, duty cycle  2 %.
c.
When mounted on 1" square PCB (FR-4 material).
d.
Parametric verification ongoing.
PCB Mountc SYMBOL RthJA RthJF LIMIT 110 34 UNIT V A mJ W °C UNIT °C/W S12-1860-Rev.
C, 13-Aug-12 1 Document Number: 66724 For technical questions, contact: automostechsupport@vishay.
com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.
vishay.
com/doc?91000 www.
vishay.
com SQ4920EY Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Static Drain-Source Breakdown Voltage VDS VGS = 0, ID = 250 μA Gate-Source Threshold Voltage Gate-Source Leakage VGS(th) IG...


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