DatasheetsPDF.com

1N1199AR

GeneSiC
Part Number 1N1199AR
Manufacturer GeneSiC
Description Silicon Standard Recovery Diode
Published Feb 3, 2016
Detailed Description Silicon Standard Recovery Diode Features • High Surge Capability • Types from 50 V to 600 V VRRM • Not ESD Sensitive Not...
Datasheet PDF File 1N1199AR PDF File

1N1199AR
1N1199AR

Overview
Silicon Standard Recovery Diode Features • High Surge Capability • Types from 50 V to 600 V VRRM • Not ESD Sensitive Note: 1.
Standard polarity: Stud is cathode.
2.
Reverse polarity (R): Stud is anode.
3.
Stud is base.
1N1199A thru 1N1206AR VRRM = 50 V - 600 V IF = 12 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N1199A(R) 1N1200A(R) 1N1202A(R) 1N1204A(R) 1N1206A(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current VRRM VRMS VDC IF TC ≤ 150 °C 50 100 200 35 70 140 50 100 200 12 12 12 Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 °C, tp = 8.
3 ms 240 240 240 400 600 V 280 420 V 400 600 V 12 12 A 240 240 A Operating temperature Storage temperature Tj Tstg -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)