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IRG4CC50UB

International Rectifier
Part Number IRG4CC50UB
Manufacturer International Rectifier
Description IGBT Die
Published Jan 31, 2016
Detailed Description IRG4CC50UB IGBT Die in Wafer Form PD- 91764A IRG4CC50UB C G E 600 V Size 5 Ultra-Fast Speed 6" Wafer Electrical Char...
Datasheet PDF File IRG4CC50UB PDF File

IRG4CC50UB
IRG4CC50UB


Overview
IRG4CC50UB IGBT Die in Wafer Form PD- 91764A IRG4CC50UB C G E 600 V Size 5 Ultra-Fast Speed 6" Wafer Electrical Characteristics ( Wafer Form ) Parameter Description Guaranteed (Min/Max) Test Conditions VCE (on) V(BR)CES VGE(th) ICES IGES Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current 2.
0V Max.
600V Min.
3.
0V Min.
, 6.
0V Max.
250µA Max.
± 1.
1µA Max.
IC = 10A, TJ = 25°C, VGE = 15V TJ = 25°C, ICES = 250µA, VGE = 0V VGE = VCE , TJ =25°C, IC =250µA TJ = 25°C, VCE = 600V TJ = 25°C, VGE = +/- 20V Mechanical Data Norminal Backmetal Composition, Thickness: Cr-Ni / V-Ag ( 1kA-2kA-.
2.
5kA ) Norminal Front Metal Composition, Thickness: 99% Al, 1% Si (4 microns) Dimensions: 0.
257" x 0.
260" Wafer Diameter: 150mm, with std.
< 100 > flat Wafer thickness: .
015" + / -.
003" Relevant Die Mechanical Dwg.
Number 01-5226 Minimum Street Width 100 Microns Reject Ink Dot Size 0.
25mm Diameter Minimum Ink Dot Location Consistent throughout same wafer lot Recommended Storage Environment: Store in original container, in dessicated nitrogen, with no contamination Recommended Die Attach Conditions For optimum electrical results, die attach temperature should not exceed 300C Reference Standard IR packaged part ( for design ) : IRG4PC50U Die Outline www.
irf.
com 1 09/27/07 ...


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