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10N65-C

Unisonic Technologies
Part Number 10N65-C
Manufacturer Unisonic Technologies
Description N-CHANNEL POWER MOSFET
Published Jan 29, 2016
Detailed Description UNISONIC TECHNOLOGIES CO., LTD 10N65-C Preliminary 10A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N65-C is...
Datasheet PDF File 10N65-C PDF File

10N65-C
10N65-C


Overview
UNISONIC TECHNOLOGIES CO.
, LTD 10N65-C Preliminary 10A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N65-C is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics.
This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
 FEATURES * RDS(ON) < 0.
86Ω@VGS =10V * Fast switching * 100% avalanche tested * Improved dv/dt capability  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 10N65L-TF3-T 10N65G-TF3-T TO-220F Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 123 GDS Packing Tube  MARKING INFORMATION PACKAGE TO-220 www.
unisonic.
com.
tw Copyright © 2014 Unisonic Technologies Co.
, Ltd MARKING 1 of 7 QW-R502-A79.
a 10N65-C Preliminary Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ± 30 V Avalanche Current (Note 2) Drain Current Continuous Pulsed (Note 2) Avalanche Energy Single Pulsed (Note 3) Repetitive (Note 2) Peak Diode Recovery dv/dt (Note 4) IAR ID IDM EAS EAR dv/dt 10 A 10 A 38 A 156 mJ 15.
6 mJ 4.
5 V/ns Power Dissipation Junction Temperature PD 156 W TJ +150 °C Operating Temperature Storage Temperature TOPR TSTG -55 ~ +150 -55 ~ +150 °C °C Notes: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.
Repetitive Rating: Pulse width limited by maximum junction temperature 3.
L = 3.
12mH, IAS = 10A, VDD = 50V, RG = 25 Ω Starting TJ = 25°C 4.
ISD ≤ 9.
5A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ = 25°C  THERMAL DATA PARAMETER Junction to Ambi...


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