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MVB50P03HDLT4G

ON Semiconductor
Part Number MVB50P03HDLT4G
Manufacturer ON Semiconductor
Description P-Channel Power MOSFET
Published Jan 28, 2016
Detailed Description MTB50P03HDL, MVB50P03HDLT4G P-Channel Power MOSFET 50 A, 30 V, Logic Level D2PAK This Power MOSFET is designed to withs...
Datasheet PDF File MVB50P03HDLT4G PDF File

MVB50P03HDLT4G
MVB50P03HDLT4G

Overview
MTB50P03HDL, MVB50P03HDLT4G P-Channel Power MOSFET 50 A, 30 V, Logic Level D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes.
The energy efficient design also offers a drain−to−source diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
Features • Avalanche Energy Specified • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recover...


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