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VN0610LL

Part Number	VN0610LL
Manufacturer	ON Semiconductor
Description	FET Transistor
Published	Jan 27, 2016
Detailed Description	VN0610LL FET Transistor N−Channel — Enhancement MAXIMUM RATINGS Rating Drain −Source Voltage Drain −Gate Voltage (RGS ...
Datasheet	VN0610LL PDF File

Overview

VN0610LL FET Transistor N−Channel — Enhancement MAXIMUM RATINGS Rating Drain −Source Voltage Drain −Gate Voltage (RGS = 1 MΩ) Gate −Source Voltage − Continuous − Non−repetitive (tp ≤ 50 μs) Drain Current Continuous Pulsed Total Power Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Temperature Range THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/16” from case for 10 seconds Symbol VDSS VDGR Value 60 60 Unit Vdc Vdc VGS VGSM ID IDM PD TJ, Tstg ± 20 ± 40 190 1000 400 3.
2 −55 to +150 Vdc Vpk mAdc mW mW/°C °C Symbol RθJA TL Max 312.
5 300 Unit °C/W °C http://onsemi.
com 1 23 CASE 29−11, S...

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