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IRF5804PbF

International Rectifier
Part Number IRF5804PbF
Manufacturer International Rectifier
Published Jan 21, 2016
Description Power MOSFET
Detailed Description l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Av
Datasheet PDF File IRF5804PbF PDF File

IRF5804PbF
IRF5804PbF


Overview
l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Low Gate Charge l Lead-Free l Halogen-Free Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.
This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
The TSOP-6 package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23.
This package is ideal for applications where printed circuit board space is at a premium.
It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.
VDSS -40V PD - 95503B IRF5804PbF HEXFET® Power MOSFET RDS(on) max (mW) 198@VGS = -10V 334@VGS = -4.
5V ID -2.
5A -2.
0A D1 6 A D D2 5D G3 4S Top View TSOP-6 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C Drain- Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current  Power Dissipation ƒ Power Dissipation ƒ Linear Derating Factor VGS TJ, TSTG Gate-to-Source Voltage Junction and Storage Temperature Range Max.
-40 -2.
5 -2.
0 -10 2.
0 1.
3 0.
016 ± 20 -55 to + 150 Units V A W mW/°C V °C Thermal Resistance RθJA www.
irf.
com Parameter Maximum Junction-to-Ambientƒ Max.
62.
5 Units °C/W 1 04/20/10 IRF5804PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-...


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