DatasheetsPDF.com

1SS351

Part Number	1SS351
Manufacturer	ON Semiconductor
Description	Schottky Barrier Diode
Published	Jan 20, 2016
Detailed Description	Schottky Barrier Diode Dual Series Schottky Barrier Diode for Mixer and Detector 5 V, 30 mA, 0.69 pF CP 1SS351 Feature...
Datasheet	1SS351 PDF File

Overview

Schottky Barrier Diode Dual Series Schottky Barrier Diode for Mixer and Detector 5 V, 30 mA, 0.
69 pF CP 1SS351 Features • Series Connection of 2 Elements in a Small−Sized Package Facilitates High−Density Mounting and Permits 1SS351−Applied Equipment to be Made Smaller • Small Interterminal Capacitance (C = 0.
69 pF typ) • Small Forward Voltage (VF = 0.
23 V max) • This is a Pb−Free Device ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Symbol Parameter Conditions Ratings Unit VRM Peak Reverse Voltage IF Forward Current Tj Junction Temperature 5 V 30 mA 125 °C Tstg Storage Temperature −55 to +125 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If ...

Similar Datasheet

1SS300 Silicon Epitaxial Planar Type Diode - Toshiba Semiconductor
1SS300 ULTRA HIGH SPEED SWITCHING APPLICATIONS DIODES - Kexin
1SS301 Silicon Epitaxial Planar Type Diode - Toshiba Semiconductor
1SS301 SUPER HIGH SPEED SWITCHING DIODE - XIN SEMICONDUCTOR
1SS301 ULTRA HIGH SPEED SWITCHING APPLICATIONS DIODES - Kexin
1SS302 Diode - Toshiba Semiconductor
1SS302 ULTRA HIGH SPEED SWITCHING APPLICATIONS - Guangdong Kexin Industrial
1SS302A Silicon Epitaxial Planar Switching Diodes - Toshiba
1SS306 Silicon Epitaxial Planar Type Diode - Toshiba Semiconductor
1SS307 Diode - Toshiba Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)