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NTMFS4926NE

ON Semiconductor
Part Number NTMFS4926NE
Manufacturer ON Semiconductor
Description Power MOSFET
Published Jan 19, 2016
Detailed Description NTMFS4926NE Power MOSFET 30 V, 44 A, Single N−Channel, SO−8 FL Features • Low RDS(on) to Minimize Conduction Losses •...
Datasheet PDF File NTMFS4926NE PDF File

NTMFS4926NE
NTMFS4926NE


Overview
NTMFS4926NE Power MOSFET 30 V, 44 A, Single N−Channel, SO−8 FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Dual Sided Cooling Capability • Optimized for 5 V, 12 V Gate Drives • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • CPU Power Delivery • DC−DC Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain C(Nuortreen1t)RqJA TA = 25°C TA = 100°C VDSS VGS ID 30 ±20 15.
5 9.
8 V V A Power Dissipation RqJA (Note 1) Continuous Drain C(Nuortreen1t)RqJA ≤ 10 s TA = 25°C TA = 25°C TA = 100°C PD ID 2.
70 W 23.
4 A 14.
8 Power Dissipation RqJA ≤ 10 s (Note 1) Continuous Drain C(Nuortreen2t)RqJA Steady State TA = 25°C TA = 25°C TA = 100°C PD ID 6.
13 W 9.
0 A 5.
7 Power Dissipation RqJA (Note 2) Continuous Drain C(Nuortreen1t)RqJC TA = 25°C TC = 25°C TC =100°C PD ID 0.
92 W 44 A 28 Power Dissipation RqJC (Note 1) Pulsed Drain Current TC = 25°C TA = 25°C, tp = 10 ms PD IDM 21.
6 W 182 A Current Limited by Package TA = 25°C Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source DV/DT Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 24 V, VGS = 10 V, IL = 21 Apk, L = 0.
1 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) IDmax TJ, TSTG IS dV/dt EAS TL 100 −55 to +150 21 6.
0 22 A °C A V/ns mJ 260 °C Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1.
Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2.
Surface−mounted on FR4 board using the minimum recommended pad size.
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