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VEC2315

Part Number	VEC2315
Manufacturer	ON Semiconductor
Description	Power MOSFET
Published	Jan 19, 2016
Detailed Description	VEC2315 Power MOSFET –60V, 137mΩ, –2.5A, Dual P-Channel This Power MOSFET is produced using ON Semiconductor’s trench t...
Datasheet	VEC2315 PDF File

Overview

VEC2315 Power MOSFET –60V, 137mΩ, –2.
5A, Dual P-Channel This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance.
This device is suitable for applications with low gate charge driving or low on resistance requirements.
Features  Low On-Resistance  4V drive  Low-Profile Package  ESD Diode-Protected Gate  Pb-Free, Halogen Free and RoHS compliance Typical Applications  Motor Driver SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) Parameter Symbol Value Unit Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS 20 V Drain Current (DC) ID 2.
5 A Drain Current ...

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